Title of article
Influence of mole ratio of Si: C on the magnetic property of undoped and vanadium carbide doped 3C-SiC
Author/Authors
Wang، نويسنده , , Hui and Yan، نويسنده , , Chengfeng and Kong، نويسنده , , Haikuan and Chen، نويسنده , , Jianjun and Xin، نويسنده , , Jun and Shi، نويسنده , , Erwei، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
4
From page
142
To page
145
Abstract
Ferromagnetism (FM) of 3C-SiC powders have been studied by tuning the mole ratio of Si: C. The results of magnetic measurements show that with increasing Si: C, the saturation magnetization (Ms) of undoped 3C-SiC is hardly varied while the Ms of vanadium carbide (VC) doped 3C-SiC is reduced. The introduction of VC mainly leads to the decrease of divacancies (VSiVC) concentration which is the FM origin, and this effect is enhanced with increasing Si: C. Furthermore, the increase of carrier concentration hardly influences the FM of 3C-SiC at VC doping concentration of 0.1 wt.%.
Journal title
Chemical Physics Letters
Serial Year
2013
Journal title
Chemical Physics Letters
Record number
1934220
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