Author/Authors :
Dugaiczyk، نويسنده , , Lars and Ngo-Duc، نويسنده , , Tam-Triet and Gacusan، نويسنده , , Jovi and Singh، نويسنده , , Karandeep and Yang، نويسنده , , Jonathan and Santhanam، نويسنده , , Sarnath and Han، نويسنده , , Jin-Woo and Koehne، نويسنده , , Jessica E. and Kobayashi، نويسنده , , Nobuhiko P. and Meyyappan، نويسنده , , M. and Oye، نويسنده , , Michael M.، نويسنده ,
Abstract :
We report unipolar resistive switching measurements from single vertical ZnO nanowires grown directly on a copper substrate. Electrical measurements using a conductive atomic force microscope show conductive filament formation at 30 kV/cm, which is an order of magnitude lower field than that for bulk films and suggest a preferential filament formation likely on the surface of the nanowires. A high resistive ratio of three orders of magnitude was observed between the high and low resistive memory states.
