High brightness light emitting diode based on single ZnO microwire

The ZnO microwires were synthesized repetitively via chemical vapor deposition method. The high power light emitting diode based on the single ZnO microwire/p-GaN heterojunction was realized. A strong ultraviolet emission accompanied by a relatively weak defects-related emission was observed at room temperature photoluminescence spectra of single ZnO microwire. The I–V curve of the heterojunction diode showed obvious rectifying characteristics with a turn-on voltage of about 7 V. Under the forward injection current of 1.1 mA, the ultraviolet electroluminescence centered at 389 nm wavelength could be obtained based on the single ZnO microwire/p-GaN heterojunction diode.