Author/Authors :
Cai، نويسنده , , Xin and Liang، نويسنده , , Hongwei and liu، نويسنده , , Yuanda and Shen، نويسنده , , Rensheng and Xia، نويسنده , , Xiaochuan and Liu، نويسنده , , Yang and Ling، نويسنده , , C.C. and Du، نويسنده , , Guotong، نويسنده ,
Abstract :
High resistivity ZnO:Cu thin films were fabricated on c-plane sapphire substrate by low pressure metal-organic chemical vapor deposition (MOCVD). The samples were treated in H2 ambient at high pressure and the thermal stability of the hydrogen-related donor-like defects was studied. Hall-effect measurement results presented that the high resistivity ZnO:Cu samples turn into n-type conductivity after H incorporation. The annealing results indicated that the hydrogenated ZnO:Cu could not recover high resistivity even after annealed at 750 °C. It is proposed that some unknown H-related donor-like defects still exist in the film after annealing.
