Title of article :
Ab initio chemical kinetics for the HCCO + OH reaction
Author/Authors :
Mai، نويسنده , , Tam V.-T. and Raghunath، نويسنده , , P. and Le، نويسنده , , Xuan T. and Huynh، نويسنده , , Lam K. and Nam، نويسنده , , Pham-Cam and Lin، نويسنده , , M.C.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Pages :
7
From page :
175
To page :
181
Abstract :
The mechanism for the reaction of HCCO and OH has been investigated at different high-levels of theory. The reaction was found to occur on singlet and triplet potential energy surfaces with multiple accessible paths. Rate constants predicted by variational RRKM/ME calculations show that the reaction on both surfaces occurs primarily by barrierless OH attack at both C atoms producing excited intermediates which fragment to produce predominantly CO and 1,3HCOH with kS = 3.12 × 10−8 T−0.59exp[−73.0/T] and kT = 6.29 × 10−11 T0.13exp[108/T] cm3 molecule−1 s−1 at T = 300–2000 K, independent of pressure at P < 76 000 Torr.
Journal title :
Chemical Physics Letters
Serial Year :
2014
Journal title :
Chemical Physics Letters
Record number :
1936112
Link To Document :
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