Antireflection and downconversion response of Nd3+ doped Y2O3/Si thin film deposited by AACVD process

Nd3+:Y2O3 nanograins-like structure films with various Nd concentrations, were deposited on Si (1 0 0) substrates by aerosol assisted chemical vapor deposition (AACVD) process. The intense 900 nm emission of Nd3+ corresponding to the 4F3/2 → 4I9/2 transition was investigated as a function of the annealing temperature. The reflectance percentage of the optimized 5 mol.% Nd:Y2O3 film was recorded at about 16% in 400–1000 nm range. The refractive index (n = 1.94) and the low porosity (P = 2.74%) showed the high transparency of this film. The obtained results demonstrate that this film can enhance the Si solar cell efficiency by light trapping and spectrum shifting.