Author/Authors :
Sun، نويسنده , , Bai-Cheng Zhao، نويسنده , , Wenxi and Li، نويسنده , , Hongwei and Wei، نويسنده , , Lujun and Chen، نويسنده , , Peng، نويسنده ,
Abstract :
Resistive switching random access memory (RRAM) is considered as a promising candidate for the next generation of non-volatile memory. Herein single-crystalline BiCoO3 microribbons with width of 2 μm and length of several microns were prepared by a hydrothermal process. We demonstrate good bipolar resistive switching behavior based on multiferroic BiCoO3 microribbons, which displays a low operation voltage (≤2 V) and long data retention (over 5 months).
