Reversible resistive switching behaviors of multiferroic single-crystalline BiCoO3 microribbons

Resistive switching random access memory (RRAM) is considered as a promising candidate for the next generation of non-volatile memory. Herein single-crystalline BiCoO3 microribbons with width of 2 μm and length of several microns were prepared by a hydrothermal process. We demonstrate good bipolar resistive switching behavior based on multiferroic BiCoO3 microribbons, which displays a low operation voltage (≤2 V) and long data retention (over 5 months).