Thin film transistors gas sensors based on reduced graphene oxide poly(3-hexylthiophene) bilayer film for nitrogen dioxide detection

Reduced graphene oxide (RGO)/poly(3-hexylthiophene) (P3HT) bilayer films were firstly utilized as active layers in OTFT gas sensors for nitrogen dioxide (NO2) detection. The OTFT with RGO/P3HT bilayer film exhibited the typical transistor characteristics and better gas sensing properties at room temperature. The electrical parameters of OTFTs based on pure P3HT film and RGO/P3HT bilayer film were calculated. The threshold voltage of OTFT was positively shifted due to the high concentration carriers in RGO. The sensing properties of the sensor with RGO/P3HT bilayer film were also investigated. Moreover, the sensing mechanism was analyzed as well.