Title of article
Theoretical study of intermolecular interactions in nanoporous networks on boron doped silicon surface
Author/Authors
Boukari، نويسنده , , Khaoula and Duverger، نويسنده , , Eric and Hanf، نويسنده , , Marie-Christine and Stephan، نويسنده , , Régis and Sonnet، نويسنده , , Philippe، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
7
From page
117
To page
123
Abstract
Supramolecular networks on a doped boron silicon surface under ultra high vacuum (UHV) have been recently obtained (Makoudi et al., 2013). The used molecule contains different end-groups, bearing either bromine, iodine or hydrogen atoms denoted 1,3,5-tri(4′-bromophenyl)benzene (TBB), 1,3,5-tri(4-iodophenyl)benzene (TIB) and 1,3,5-triphenyl-benzene (THB). To explain the formation of the nanoporous structures, interactions of the type aryl-X⋯H hydrogen bonds (X being a halogen atom) have been proposed. In order to obtain a complete insight of the stabilizing interaction in these networks adsorbed on the Si(1 1 1)√3x√3R30°-boron surface, we present a full density-functional-theory study taking the van der Waals interactions into account. We investigated the energetic and structural properties of three different nanoporous networks constituted by TBB, TIB and THB molecules. The electronic studies allow us to identify hydrogen bond and dipole–dipole intermolecular interactions in the supramolecular halogen networks, whereas only dipole–dipole interactions are present in the 1,3,5-triphenyl-benzene nanoporous network.
Journal title
Chemical Physics Letters
Serial Year
2014
Journal title
Chemical Physics Letters
Record number
1937663
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