Title of article :
ZnO homojunction ultraviolet photodetector based on p-type dual-doped film and n-type nanorods
Author/Authors :
Duan، نويسنده , , Li and Wang، نويسنده , , Pei and Zhang، نويسنده , , Wenxue and Yu، نويسنده , , Xiaochen and Fan، نويسنده , , JiBin and Wei، نويسنده , , Feng، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2015
Pages :
4
From page :
123
To page :
126
Abstract :
ZnO:(Ag,N)/ZnO p–n homojunction was fabricated by depositing a ZnO:(Ag,N) film on vertically aligned ZnO nanorods (NRs). The homojunction is able to work as a self-powered device due to the photovoltaic effect, and the ZnO NRs play an important role in the photovoltaic conversion process. Current–voltage (I–V) characteristic shows a turn-on voltage of ∼3 V and a rectification ratio of 1.3 × 102 at 5 V. Spectral responsivity exhibits an UV-to-visible rejection ratio of 1 × 102. The photocurrent rise and decay times are 7 and 45 ms, respectively. These results indicate the ZnO:(Ag,N)/ZnO homojunction is an attractive candidate for high-performance self-powered UV photodetectors.
Journal title :
Chemical Physics Letters
Serial Year :
2015
Journal title :
Chemical Physics Letters
Record number :
1937887
Link To Document :
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