Title of article
Influences of halogen atoms on indole-3-acetonitrile (IAN): Crystal structure and Hirshfeld surfaces analysis
Author/Authors
Luo، نويسنده , , Yanghui and Yang، نويسنده , , Li-Jing and Han، نويسنده , , Guangjun and Liu، نويسنده , , Qingling and Wang، نويسنده , , Wei and Ling، نويسنده , , Yang and Sun، نويسنده , , Bai-Wang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
8
From page
679
To page
686
Abstract
Crystal structural investigations and Hirshfeld surface analysis of three halogen atoms (4-Cl, 6-Cl and 4-Br) substituted indole-3-acetonitrile (IAN) were reported in this work. The structures of the present three compounds were characterized by Infrared spectra, Elemental analyses, NMR spectra, differential scanning calorimetry (DSC), thermogravimetric analyses (TGA) and hot stage microscopy (HSM). The Hirshfeld surfaces analysis in terms of crystal structure, intermolecular interactions and π⋯π stacking motifs were performed. We found that the different kinds of halogen atoms and the different substituted positions have a significant effect on the crystal structures, molecular π⋯π stacking motifs, melting points, and the nature of intermolecular interactions for IANs.
Keywords
substituent effect , Indole-3-acetonitrile (IAN) , Hirshfeld surfaces , ??? stacking motifs
Journal title
Journal of Molecular Structure
Serial Year
2014
Journal title
Journal of Molecular Structure
Record number
1977374
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