Title of article :
Materials science in the far-IR with electrostatic based FELs
Author/Authors :
Allen، نويسنده , , S.J. and Craig، نويسنده , , K. and Galdrikian، نويسنده , , B. and Heyman، نويسنده , , J.N. and Kaminski، نويسنده , , J.P. and Scott، نويسنده , , J.S. and Sherwin، نويسنده , , M.S. and Unterrainer، نويسنده , , K. and Wanke، نويسنده , , M. and Campman، نويسنده , , K. and Hopkins، نويسنده , , P.F. and Gossard، نويسنده , , A.C. and Chow، نويسنده , , D.H. and Lui، نويسنده , , M. and Liu، نويسنده , , T.K.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1995
Pages :
4
From page :
536
To page :
539
Abstract :
A technology gap exists between ∼ 100 GHz and ∼ 10 THz. Free-electron lasers (FELs), driven by high quality, relatively low energy electron beams from electrostatic accelerators, and capable of generating kilowatts of coherent, tunable radiation, are ideally suited to explore the enabling science for future technology in this spectral range. We describe two experiments that use terahertz “optical rectification” to measure i) the intensity and temperature dependent energy relaxation in quantum wells and ii) the intrinsic relaxation of resonant tunneling diodes. Both benefit from the power and tunablilty of the UCSB FELs.
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
1995
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
1994412
Link To Document :
بازگشت