Recent advances in X-ray nanolithography using synchrotron radiation at Super-ACO

This paper describes our recent advances in high resolution synchrotron radiation lithography. Fabrication processes of high resolution X-ray masks based on our current SiCW technology have been optimized to be compatible with a commercial Karl Süss stepper. As a result, well defined 50 nm wide isolated lines and small gratings of period down to 100 nm have been fabricated and tested in proximity X-ray lithography with the stepper. Replication tests were done with a minimum gap setting down to 5 μm. Results show that proximity X-ray lithography using synchrotron radiation is a viable technology for printing 50 nm linewidth features.