Author/Authors :
S. Beolè، نويسنده , , C. J. S. C. Burger، نويسنده , , P. and Cantatore، نويسنده , , E. and Casse، نويسنده , , G. and Corsi، نويسنده , , F. and Cuomo، نويسنده , , M. and Da?abrowski، نويسنده , , W. and De Venuto، نويسنده , , D. and Giubellino، نويسنده , , P. and Gramegna، نويسنده , , G. and Manzari، نويسنده , , V. and Marzocca، نويسنده , , C. and Navach، نويسنده , , F. and Portacci، نويسنده , , G. and Riccati، نويسنده , , L. and Vacchi، نويسنده , , A.، نويسنده ,
Abstract :
The inner tracking system of the ALICE detector for PbPb collisions at the LHC require a very good granularity in the innermost planes, due to the high particle density, up to 8000 particles per unit of rapidity. The silicon drift detectors are a very good candidate for this application, but up to now no large system using this technology has been industrially produced and operated in experiments. One of the first steps towards large scale production is the study of the doping uniformity in commercially available Si wafers. The understanding of doping fluctuations is of fundamental importance since they introduce deviations of the electron trajectories from the expected ones. In addition, it is also necessary to know the changes possibly introduced by different processing steps in the resistivity profiles. We report here the results of measurements of resistivity profiles for NTD silicon wafers both before and after processing.
