Author/Authors :
Gramegna، نويسنده , , G. and Corsi، نويسنده , , F. and Cantatore، نويسنده , , E. and Cuomo، نويسنده , , M. and De Venuto، نويسنده , , D. and Marzocca، نويسنده , , C. and Portacci، نويسنده , , G.V. and Vacchi، نويسنده , , A. and Manzari، نويسنده , , V. and Navach، نويسنده , , F. and Beolé، نويسنده , , S. and Casse، نويسنده , , G. and Giubellino، نويسنده , , P. and Riccati، نويسنده , , L. and Burger، نويسنده , , P.، نويسنده ,
Abstract :
By use of extensive simulation, it is shown how a spread of the aluminium metallization over the interacthodic field oxide sensibly lowers the electric field at reverse biased p+n junctions, thus allowing use of higher drift fields. Based on the simulation results, the layout of a few test structures implementing alternative technological choices has been defined. The fabrication of these prototype detectors is presently in progress.
