Author/Authors :
Alessandrello، نويسنده , , A. and Brofferio، نويسنده , , C. and Camin، نويسنده , , D.V. and Cremonesi، نويسنده , , O. and Giuliani، نويسنده , , A. and Nucciotti، نويسنده , , A. Massi Pavan a، نويسنده , , M. and Pessina، نويسنده , , G. and Previtali، نويسنده , , E.، نويسنده ,
Abstract :
We present a first prototype of a monolithic differential voltage-sensitive preamplifier for cryogenic applications made in a GaAs ion implanted MESFET process. This preamplifier presents a very high input impedance using only a single long-tailed pair at its input, which allows the noise to be kept low. It was designed to obtain low power dissipation and a large dynamic range. The results of the first prototype chips are presented.
