A stacked dielectric film for a silicon microstrip detector

Stacked dielectric films have been developed so as to be applied to a silicon microstrip detector (SSD). We expected that these stacked films would have superior properties for an integrated capacitor in terms of a high dielectric breakdown characteristic, reliability, a large capacitance and radiation hardness. We measured the capacitance and leakage current for test capacitors with single-layered silicon dioxide (SiO2), single-layered silicon nitride (Si3N4), NO (Si3N4SiO2), ON (SiO2Si3N4) and ONO (SiO2Si3N4SiO2).