Author/Authors :
Almeida، نويسنده , , J. and Barbo، نويسنده , , F. and Bertolo، نويسنده , , M. and Bianco، نويسنده , , A. and Braem، نويسنده , , A. and Cerasari، نويسنده , , S. and Coluzza، نويسنده , , C. and dellʹOrto، نويسنده , , Tiziana and Fontana، نويسنده , , S. and Margaritondo، نويسنده , , G. and Nappi، نويسنده , , E. and Paic، نويسنده , , G. and Piuz، نويسنده , , F. and Sanjinés، نويسنده , , R. and Scognetti، نويسنده , , T. and Sgobba، نويسنده , , S.، نويسنده ,
Abstract :
We demonstrated that polycrystalline cesium iodide (CsI) on large area NiAu coated printed board provides a quantum efficiency (QE) higher by a factor of 2 than the films deposited on the standard CuAu printed circuits. This is the most important result of the present systematic study of the QE lateral inhomogeneity for CsI on different substrates. We found a strong correlation between the QE lateral variation and the morphological homogeneity of the films. The QE was measured by UV photoelectron emission microscopy and spatially resolved X-ray photoemission, and the morphology studies were performed by secondary electron microscopy, X-ray diffraction and scanning tunneling microscopy.
