Author/Authors :
Wobrauschek، نويسنده , , P. and Kregsamer، نويسنده , , P. and Ladisich، نويسنده , , W. and Streli، نويسنده , , C. and Pahlke، نويسنده , , S. and Fabry، نويسنده , , L. and Garbe، نويسنده , , S. and Haller، نويسنده , , M. and Knِchel، نويسنده , , Wolfgang A. K. Radtke، نويسنده , , M.، نويسنده ,
Abstract :
SR-TXRF (Synchrotron Radiation excited Total Reflection X-ray Fluorescence Analysis) with monoenergetic radiation produced by a WC multilayer monochromator has been applied to the analysis of Ni on a Si-wafer surface. An intentionally contaminated wafer with 100 pg has been used to determine the detection limits. 13 fg have been achieved for Ni at a beam current of 73 mA and extrapolated to 1000 s. This technique simulates the sample preparation technique of Vapour Phase Decomposition (VPD) on a wafer surface.
