Author/Authors :
Eberth، نويسنده , , J. and Thomas، نويسنده , , H.G. and Brentano، نويسنده , , P.v. and Lieder، نويسنده , , R.M. and Jنger، نويسنده , , H.M. and Kنmmerfing، نويسنده , , H. and Berst، نويسنده , , M. and Gutknecht، نويسنده , , D. and Henck، نويسنده , , R.، نويسنده ,
Abstract :
This paper discusses the development and the realisation of an encapsulated Ge detector. The properties of a first prototype detector are; relative efficiency εrel = 21.4%; energy resolution: ΔEγ(1.33MeV) = 2.10 keV and ΔEγ(122 keV) = 1.10 keV. The encapsulation technology offers advantages; several encapsulated Ge detectors can be mounted closely packed in a cryostat, all electronic parts of the first preamplifier stage are accessible and induced radiation damage of the Ge crystal can be annealed in a standard furnace.
