Comparison between phonon detection schemes

A number of schemes are being developed to detect phonons produced by particle by particle interactions in insulating crystals: heavily doped semiconductors, superconducting transition edge sensors in various bias modes, SIN junctions, and SIS junctions coupled with superconducting films. A theoretical comparison of the ultimate resolution of these schemes is attempted. This analysis is based on the known performance and limitations of these schemes, the physical processes involved (e.g., collection time of the phonons) and the standard theory of optimal filtering.