Title of article
A microscopic explanation for type inversion and the annealing behaviour of radiation damaged silicon detectors
Author/Authors
Matheson، نويسنده , , J. and Robbins، نويسنده , , M. and Watts، نويسنده , , S. and Hall، نويسنده , , G. and MacEvoy، نويسنده , , B.، نويسنده ,
Pages
3
From page
575
To page
577
Abstract
A semiconductor device model, DLTS measurements and defect kinetics considerations lead us to propose an explanation for the major changes in the macroscopic properties of silicon detectors caused by neutron irradiation.
Journal title
Astroparticle Physics
Record number
1997486
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