Author/Authors :
Beck، نويسنده , , G.A. and Carter، نويسنده , , A.A. and Carter، نويسنده , , J.R. and Greenwood، نويسنده , , N.M and Lucas، نويسنده , , A.D. and Munday، نويسنده , , D.J. and Pritchard، نويسنده , , T.W. and Robinson، نويسنده , , D. and Wilburn، نويسنده , , C.D. and Wyllie، نويسنده , , K.، نويسنده ,
Abstract :
The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction. We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage, in reasonable agreement with previous studies of junction breakdown.
