Pion and proton induced radiation damage to silicon detectors

We report on the radiation damage to silicon detectors at 25°C and 10°C induced by 190 MeV positively charged pions and 21 MeV protons. The deduced damage parameters and annealing time constants characterize the change of the diode leakage currents and full depletion voltages as a function of temperature and fluences. The results are relevant for the optimisation of the operating parameters of the HERA-B silicon vertex detector system.