Capacitance measurements of double-sided silicon microstrip detectors

Direct measurements of the total capacitance with respect to ground of both the n- and p-sides of double- and single-metal silicon microstrip detectors over six frequency decades are described. Individual measurements of contributions to the total capacitance of a single strip are described. These include the detectorʹs backplane capacitance and its coupling and interstrip capacitances. The combination of the constituent capacitances is shown to be consistent with the direct measurement and with a SPICE simulation. Additional n-side contributions due to the second-metal layer are also included in the direct measurement of total capacitance and in simulation. Measurements on detectors from a variety of vendors and with several geometries are compared with those of other workers. A discussion of the isolation and grounding requirements for each class of measurement and a comparison of several meters is included.