Author/Authors :
Bates، نويسنده , , S.J. and Furetta، نويسنده , , C. and Glaser، نويسنده , , M. and Lemeilleur، نويسنده , , F. and Leَn-Floriلn، نويسنده , , E. and Gِكling، نويسنده , , C. and Kaiser، نويسنده , , John B. Anderson, Rolf Johannesson، نويسنده , , A. and Wunstorf، نويسنده , , R. and Feick، نويسنده , , H. and Fretwurst، نويسنده , , E. and Lindstrِm، نويسنده , , G. H. Moll، نويسنده , , M. and Taylor، نويسنده , , G. and Chilingarov، نويسنده , , A.، نويسنده ,
Abstract :
The damage induced by pions in silicon detectors is studied for positive and negative pions for fluences up to 1014 cm−2 and 1013 cm−2, respectively. Results on the energy dependence of the damage in the region of 65 to 330 MeV near to the Δ resonance are presented. The change in detector characteristics such as leakage current, charge collection efficiency and effective impurity concentration including long-term annealing effects have been studied. Comparisons to neutron- and proton-induced damage are presented and discussed.
