Author/Authors :
Rogalla، نويسنده , , M and Chen، نويسنده , , J.W and Geppert، نويسنده , , R and Kienzle، نويسنده , , R. and Irsigler، نويسنده , , R and Ludwig، نويسنده , , J and Runge، نويسنده , , K and Fiederle، نويسنده , , M and Benz، نويسنده , , K.W and Schmid، نويسنده , , T.H and da Via، نويسنده , , C and Lauxtermann، نويسنده , , S and Liu، نويسنده , , X and Krueger، نويسنده , , J and Weber، نويسنده , , E.R، نويسنده ,
Abstract :
Schottky diodes made of semi-insulating (SI) gallium arsenide and bulk material received from various manufactures were studied by using magnetic circular dichroism of absorption (MCDA), near-infrared absorption (NIR), CV- and Hall-measurements. The results have been analysed to investigate the influence of the EL2/EL2+-concentration to the detector properties. The MCDA measurements of these different materials showed a variation of the EL2+-concentration between 3.0 and 6.5 × 1015 cm−3. A likely dependence of the charge collection efficiency (CCE) for alpha particles on the EL2+-concentration was observed. Also an influence of the EL2+-concentration on the space charge density measured by CV and the leakage current density can be seen. No correlation between the room temperature mobility and the EL2+-concentration was found. We conclude that the EL2+-concentration and the position of the Fermi level have a influence on the detector performance.
