Author/Authors :
Cola، نويسنده , , A and Quaranta، نويسنده , , F and Ciocci، نويسنده , , M.A and Fantacci، نويسنده , , M.E، نويسنده ,
Abstract :
In this work a numerical approach has been used to investigate some properties of semi-insulating GaAs detectors. In particular, the electric field and the carriers mean free path distributions have been obtained, by solving transport and Poisson equations. The knowledge of these quantities allows us to determine the charge-collection efficiency and other detector characteristics. A comparison with the experimental results of X-ray irradiated detectors of different thicknesses has been carried out.
