Title of article
Characterization of the HgI2 surface layer after KI etching
Author/Authors
J.P. Ponpon)، نويسنده , , J.P. and Sieskind، نويسنده , , M and Amann، نويسنده , , M and Bentz، نويسنده , , Rosalia and Corbu، نويسنده , , C، نويسنده ,
Pages
5
From page
112
To page
116
Abstract
The formation and properties of the chemical complex which forms on the HgI2 surface during etching in KI have been investigated. The amount of complex, identified as [KHgI3,H2O], remaining on the surface has been determined as a function of the KI concentration, the time of etching in KI and the time of rinse in water. This complex has been found to be very unstable and strongly hygroscopic. Its resistivity after drying is about 105 times lower than that of bulk HgI2.
Journal title
Astroparticle Physics
Record number
1999207
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