Author/Authors :
J.P. Ponpon)، نويسنده , , J.P. and Sieskind، نويسنده , , M and Amann، نويسنده , , M and Bentz، نويسنده , , Rosalia and Corbu، نويسنده , , C، نويسنده ,
Abstract :
The formation and properties of the chemical complex which forms on the HgI2 surface during etching in KI have been investigated. The amount of complex, identified as [KHgI3,H2O], remaining on the surface has been determined as a function of the KI concentration, the time of etching in KI and the time of rinse in water. This complex has been found to be very unstable and strongly hygroscopic. Its resistivity after drying is about 105 times lower than that of bulk HgI2.
