Author/Authors :
Hofmann، نويسنده , , D.M and Stadler، نويسنده , , W and Christmann، نويسنده , , P and Meyer، نويسنده , , B.K، نويسنده ,
Abstract :
The current knowledge on extrinsic and intrinsic point defects in CdTe and Cd1−xZnxTe as obtained by electron paramagnetic resonance and related techniques is reviewed. Special attention will be paid to the properties of intrinsic defects such as vacancies (VCd and VTe) and complexes formed with dopants (A centres: VCd-donor, and donor-VCd-donor complexes). In view of the high resistive material required for X- and γ-ray detector applications such defects seem to play an important role.
