Author/Authors :
Iwanczyk، نويسنده , , J.S and Patt، نويسنده , , B.E and Segal، نويسنده , , J and Plummer، نويسنده , , J and Vilkelis، نويسنده , , G and Hedman، نويسنده , , B and Hodgson، نويسنده , , K.O and Cox، نويسنده , , A.D and Rehn، نويسنده , , L and Metz، نويسنده , , J، نويسنده ,
Abstract :
In this paper we describe the design of a new type of detector based on silicon drift chamber (SDC) detectors for near-room temperature X-ray absorption fine structure (EXAFS) applications. Theoretical analysis shows that these devices are capable of electronic noise levels that are competitive with cryogenic detectors at significantly higher count rates. Novel field-plate electrodes and integration of the FET with the use of a secondary epitaxial layer will be discussed. Results of modelling and simulation of the new SDC structures will be presented.
