Simulation and modelling of a new silicon X-ray drift detector design for synchrotron radiation applications

In this paper we describe the design of a new type of detector based on silicon drift chamber (SDC) detectors for near-room temperature X-ray absorption fine structure (EXAFS) applications. Theoretical analysis shows that these devices are capable of electronic noise levels that are competitive with cryogenic detectors at significantly higher count rates. Novel field-plate electrodes and integration of the FET with the use of a secondary epitaxial layer will be discussed. Results of modelling and simulation of the new SDC structures will be presented.