Author/Authors :
S.R. Amendolia، نويسنده , , S.R and Bisogni، نويسنده , , M.G and Campbell، نويسنده , , M and Cola، نويسنده , , A and DʹAuria، نويسنده , , S and Da Vià، نويسنده , , C and Heijne، نويسنده , , E.H.M and Fantacci، نويسنده , , M.E and OʹShea، نويسنده , , V and Rosso، نويسنده , , V and Smith، نويسنده , , K and Vasanelli، نويسنده , , L، نويسنده ,
Abstract :
In previous studies, various semi-insulating LEC GaAs crystals were irradiated with photons in the diagnostic energy range (20–100 keV), in view of a possible application in digital radiography. Solid-state and irradiation measurements, together with Monte Carlo simulations, have indicated good candidates for this application among the crystals we have investigated. In this paper we present results concerning the detection characteristics (detection efficiency, charge-collection efficiency and energy resolution as functions of the bias voltage) of one of these materials and the images obtained by a pixel detector made on the same material and a bump-bonded electronic system.
