Author/Authors :
Bortoletto، نويسنده , , D. and Garfinkel، نويسنده , , A.F. and Hardman، نويسنده , , A.D. and Hoffman، نويسنده , , K.D. and Keaffaber، نويسنده , , T.A. and Shaw، نويسنده , , N.M. and Stanley، نويسنده , , G.R.، نويسنده ,
Abstract :
Double-metal double-sided silicon microstrip prototype sensors have been developed by Sintef/SI, Micron Semiconductor, and Hamamatsu Photonics for the CDF silicon vertex detector upgrade, SVXII. The sensors are biased with polysilicon resistors and have integrated AC-coupling and p-stop isolation. We present measurements of the total capacitance, interstrip capacitance and overlap capacitance due to the double metal structure. The measurements are compared to a simple electrostatic model.