Title of article
Load capacitance of single-sided silicon strip detectors with double-metal layers
Author/Authors
Miyata، نويسنده , , H. and Aso، نويسنده , , T. and Sakurakichi، نويسنده , , K. and Miyano، نويسنده , , K. and Haba، نويسنده , , J. and Ikeda، نويسنده , , H. and Iwasaki، نويسنده , , H. and Matsuda، نويسنده , , T. and Ozaki، نويسنده , , H. and Tanaka، نويسنده , , M. and Tsuboyama، نويسنده , , T. and Yamada، نويسنده , , Y. and Okuno، نويسنده , , S. and Avrillon، نويسنده , , S. and Hazumi، نويسنده , , M. and Nagashima، نويسنده , , Y. and Asano، نويسنده , , Y، نويسنده ,
Pages
6
From page
110
To page
115
Abstract
The load capacitance of the single-sided silicon microstrip detector with double-metal layers was studied. In order to understand the capacitance due to the double-metal structure, we have fabricated single-sided microstrip detectors with different double-metal structure on the junction (p) side or the ohmic (n) side. The measured capacitance was compared with the prediction of LEPSI-CRN model.
Journal title
Astroparticle Physics
Record number
1999997
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