• Title of article

    Escape peak ratios in silicon X-ray charge coupled devices (CCDs)

  • Author/Authors

    McCarthy، نويسنده , , Kieran J. and Owens، نويسنده , , Alan and Keay، نويسنده , , Adam، نويسنده ,

  • Pages
    7
  • From page
    403
  • To page
    409
  • Abstract
    The intensity of the escape peak from the CCDs developed for the Joint European X-ray Telescope (JET-X) has been investigated over the energy range 2–10 keV. Both measured and calculated escape peak ratios (i.e., the ratio of counts in the escape peak to the sum of the counts in the escape and main peaks) are found to be in excellent agreement for all event sizes (i.e., single pixel events, 1 and 2 pixel events, etc.). Using a Monte Carlo simulation the escape peak ratio has been investigated as a function of pixel size and depletion depth. For completeness, we list the energy dependent parameterised forms for five CCDs used in three major astronomy missions.
  • Keywords
    Charge coupled devices , X-rays , Escape peaks
  • Journal title
    Astroparticle Physics
  • Record number

    2000254