Title of article
Wavelength dependence of avalanche photodiode (APD) parameters
Author/Authors
Kirn، نويسنده , , Th. and Schmitz، نويسنده , , D. and Schwenke، نويسنده , , J. and Flügel، نويسنده , , Th. and Renker، نويسنده , , D. and Wirtz، نويسنده , , H.P.، نويسنده ,
Pages
3
From page
202
To page
204
Abstract
New types of Hamamatsu avalanche photodiodes (APD) have been investigated for the readout of PbWO4 crystals. The results presented cover quantum efficiency measurements of APD prototype A-E, which is passivated by a SiO2 layer or a Si3N4 layer, before and after exposure to a 5.5 Mrad dose of60Co photons. The measurements of the gain and of the excess noise factor as a function of the wavelength are also presented and compared to analytic calculations based on a simple model for the internal APD structure.
ork was performed within the frame of the CMS ECAL group.
Journal title
Astroparticle Physics
Record number
2000854
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