New results on MRS APDs

Characterisation of recently developed at CPTA for high-energy and medical physics applications MRS (Metal-Resistive layer-Semiconductor) APDs was done at ITEP. Special emphasis in the new design was made on improvement of time characteristics and photosensitivity in green wavelength. Response of detectors to β-, γ-sources and LEDs has been studied. Gain (up to 105) has been measured as a function of temperature and voltage. Good separation of 1-, 2-, etc. photoelectron peaks was observed in spectra at room temperature. No ageing of the detectors throughout several months operation under continuous strong illumination has been observed. Possible applications of detectors are discussed.