Author/Authors :
G. and Rente، نويسنده , , C and Arbabi، نويسنده , , S and Braunschweig، نويسنده , , W and Breibach، نويسنده , , J and Chu، نويسنده , , Z and Karpinski، نويسنده , , Fabio and Krais، نويسنده , , R and Kubicki، نويسنده , , T and Lübelsmeyer، نويسنده , , K and Schoentag، نويسنده , , M and Siedling، نويسنده , , R and Syben، نويسنده , , O and Tenbusch، نويسنده , , Joseph W. Toporowski، نويسنده , , M and Wittmer، نويسنده , , B and Xiao، نويسنده , , W.J، نويسنده ,
Abstract :
In order to achieve a high signal-to-noise ratio and a low-space consumption it is necessary to use integrated resistors for the biasing of GaAs microstrip detectors used in high-energy physics experiments (e.g. CMS, H1). Metal-semiconductor-metal (MSM) structures operating in the reach through regime seem to be a promising solution for that purpose. According to the requirements on radiation hardness of strip detectors to be used in the CMS experiment, we have irradiated MSM biasing structures with up to 4.6 × 1014neutronscm2. The radiation effects on the dc and noise characteristics of the devices are investigated. Furthermore, the effects of an annealing procedure are examined.
