Title of article
Radiation damage of π-ν GaAs structures
Author/Authors
Chilingarov، نويسنده , , A and Sloan، نويسنده , , T، نويسنده ,
Pages
4
From page
395
To page
398
Abstract
The radiation damage of GaAs structures with a buried π-ν junction is investigated. The main degradation is a decrease in the charge collection efficiency. The effect of 3 × 1014cm−2 1 MeV neutrons is similar to that of 1.15 × 1014cm−2 24 GeV protons. The dark current after the irradiation converges to a saturation value as predicted by a model. Isothermal annealing up to 200°C allows the charge collection efficiency to recover significantly.
Journal title
Astroparticle Physics
Record number
2001140
Link To Document