Radiation damage of π-ν GaAs structures

The radiation damage of GaAs structures with a buried π-ν junction is investigated. The main degradation is a decrease in the charge collection efficiency. The effect of 3 × 1014cm−2 1 MeV neutrons is similar to that of 1.15 × 1014cm−2 24 GeV protons. The dark current after the irradiation converges to a saturation value as predicted by a model. Isothermal annealing up to 200°C allows the charge collection efficiency to recover significantly.