Defects introduced in the electron irradiation of GaAs: Identification with the positron lifetime spectroscopy

We will show that positron lifetime spectroscopy provides information on the atomic structure of vacancy and ion-type defects in semiconductors. We will further demonstrate that positrons can be used to study electrical and optical properties of defects as well as their thermal stability in the heat treatments of the material. Especially, we will review information that positron experiments have provided on the point defects formed in 1–2 MeV electron irradiation of GaAs.