• Title of article

    Mobility of excess electrons in hexamethyldisiloxane and bis(trimethylsilyl)methane

  • Author/Authors

    Holroyd، نويسنده , , Richard A. and Itoh، نويسنده , , Kengo and Nishikawa، نويسنده , , Masaru، نويسنده ,

  • Pages
    4
  • From page
    233
  • To page
    236
  • Abstract
    The mobility of excess electrons in bis(trimethylsilyl)methane is 63 cm2/V s, and in hexamethyldisiloxane 22 cm2/V s. For these and related silicon-containing compounds, the mobility is greater than for those alkanes which have comparable free-ion yields.
  • Journal title
    Astroparticle Physics
  • Record number

    2001329

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2001329