Model predictions for the NIEL of high energy pions in Si and GaAs

The concept of NIEL (Non Ionising Energy Loss) is usually considered to correlate the effects of the displacement damage produced in the material bulk by different particles in different energy ranges. An evaluation of the NIEL is especially important for those semiconductors which are planned to be used in the extreme radiation environment of the new generation of colliders as LHC. In the present work, a calculation of the pion NIEL in silicon and GaAs, in the energy region up to 50 GeV is reported and discussed. The energy dependence of the NIEL is found to follow the resonant structures of the pion-nuclei interactions, where the strongest effect is due to the Δ33 resonance. Above 1 GeV a slight monotonic decreasing behaviour of the NIEL has been found, both for Si and GaAs.