• Title of article

    Ultra Low Power 14XM FinFETʹʹs Process-a Radical New Approach to Transistors

  • Author/Authors

    V.، Suhas K. نويسنده APS College of Engineering ,

  • Issue Information
    روزنامه با شماره پیاپی 3 سال 2013
  • Pages
    3
  • From page
    810
  • To page
    812
  • Abstract
    FinFET technology is a radical new technology that has been proposed by the industry to overcome large leakage power occurring in low power VLSI circuits. In this paper, the working of the basic MOSFET, condition of operations for any transistor and the FinFET along with its structure is described. This paper mainly covers how FinFET can be an advantage compared to basic MOSFET and how leakage can be reduced in FinFET is explained with the comparison of basic MOSFET. The fabrication steps are briefly discussed.
  • Journal title
    International Journal of Electronics Communication and Computer Engineering
  • Serial Year
    2013
  • Journal title
    International Journal of Electronics Communication and Computer Engineering
  • Record number

    2002171