Title of article
Ultra Low Power 14XM FinFETʹʹs Process-a Radical New Approach to Transistors
Author/Authors
V.، Suhas K. نويسنده APS College of Engineering ,
Issue Information
روزنامه با شماره پیاپی 3 سال 2013
Pages
3
From page
810
To page
812
Abstract
FinFET technology is a radical new technology that has been proposed by the industry to overcome large leakage power occurring in low power VLSI circuits. In this paper, the working of the basic MOSFET, condition of operations for any transistor and the FinFET along with its structure is described. This paper mainly covers how FinFET can be an advantage compared to basic MOSFET and how leakage can be reduced in FinFET is explained with the comparison of basic MOSFET. The fabrication steps are briefly discussed.
Journal title
International Journal of Electronics Communication and Computer Engineering
Serial Year
2013
Journal title
International Journal of Electronics Communication and Computer Engineering
Record number
2002171
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