Author/Authors :
Rogalla، نويسنده , , M and Eich، نويسنده , , Th and Evans، نويسنده , , N and Geppert، نويسنده , , R and Gِppert، نويسنده , , R. and Irsigler، نويسنده , , R and Ludwig، نويسنده , , J and Runge، نويسنده , , K and Schmid، نويسنده , , Th and Marder، نويسنده , , D.G، نويسنده ,
Abstract :
To investigate the trapping and detrapping in SI-GaAs particle detectors we analyzed the charge signals caused by 5.48 MeV alpha particles, using a charge sensitive preamplifier. From the bias and temperature dependence of these signals we determine the activation energies of two electron traps. Additional simulation and measurements of the charge carrier lifetime as a function of resistivity have shown that the EL2+ trap is the dominant electron trap in semi-insulating GaAs.
