Title of article
Proton-induced displacement damage in GaAs and radiation-hardness of semiconductor detectors for high energy physics
Author/Authors
A.P and Khludkov، نويسنده , , S.S. and Stepanov، نويسنده , , V.E. and Tolbanov، نويسنده , , O.P.، نويسنده ,
Pages
5
From page
60
To page
64
Abstract
A model of the radiation hardness of semiconductor detector materials is developed in terms of local charge neutrality (LCN). The non-ionizing energy deposition in GaAs has been calculated for protons with energies ranging from 1 to 25 GeV. Deep centres are shown to play a basic role in determining the radiation hardness of charged particle detectors fabricated from high-resistivity semiconductor material.
Journal title
Astroparticle Physics
Record number
2002395
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