Title of article
Optical deep-level transient characterisation of gamma-irradiated semi-insulating gallium arsenide
Author/Authors
Lai، نويسنده , , Say Teng and Alexiev، نويسنده , , Dimitri and Schwab، نويسنده , , Claude and Donnelly، نويسنده , , Ian، نويسنده ,
Pages
5
From page
76
To page
80
Abstract
A unique optical deep-level transient conductance spectroscopy (ODLTCS) technique has been employed for studying undoped semi-insulating (SI) GaAs material. In the undoped SI GaAs, the Fermi-level first shifts towards gamma irradiation of the conduction band at low γ fluence and then towards the valence band at high γ fluence. Similar conclusions have been derived from electron-paramagnetic resonance (EPR) measurements on the ionised ASGa concentration.
Journal title
Astroparticle Physics
Record number
2002398
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