Author/Authors :
Lai، نويسنده , , Say Teng and Alexiev، نويسنده , , Dimitri and Schwab، نويسنده , , Claude and Donnelly، نويسنده , , Ian، نويسنده ,
Abstract :
A unique optical deep-level transient conductance spectroscopy (ODLTCS) technique has been employed for studying undoped semi-insulating (SI) GaAs material. In the undoped SI GaAs, the Fermi-level first shifts towards gamma irradiation of the conduction band at low γ fluence and then towards the valence band at high γ fluence. Similar conclusions have been derived from electron-paramagnetic resonance (EPR) measurements on the ionised ASGa concentration.
