Title of article
Growth of high purity GaAs using low-pressure vapour-phase epitaxy
Author/Authors
Adams، نويسنده , , R.L.، نويسنده ,
Pages
4
From page
125
To page
128
Abstract
The growth of high purity films of gallium arsenide using growth rates of greater than 1 μm/minute has been demonstrated using Low-Pressure Vapour-Phase Epitaxy. These films have been found to be suitable for high energy particle detectors and high voltage Schottky diodes.
Keywords
LPVPE , Low-pressure vapour-phase epitaxy , GaAs
Journal title
Astroparticle Physics
Record number
2002404
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