GaAs structures with deep centres for ionizing radiation detection

GaAs structures with deep centres have been proposed for the manufacture of microstrip detectors (MSD). It has been shown that the processes of collection of non-equilibrium charge carriers can be described by applying the drift model in which the dependence of the amplitude of the registered charge on the electric field, E, is approximately Q ∼ E13. The main region responsible for charge collection is the space charge region of the π-ν junction and the high resistivity π region within the n+-π-ν-n structures fabricated by in-diffusion of Cr and Fe deep dopants into substrate GaAs wafers.