Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties

In recent years, new types of semiconductor heterostructures consisting of only one material in different crystal structures, such as wurtzite/zinc-blende heterostructures (heteropolytypic structures) are under discussion. Such heterostructures maintain a completely defect-free, lattice matched, and coherent interface and effects due to different chemical constituents can be avoided. In this field, silicon carbide (SiC) is the most promising candidate because SiC crystallizes in more than two different stable structures. The preparation of heteropolytypic structures by only a change of the crystal structure during the growth is a great challenge and is realized only under well-defined conditions of molecular beam epitaxy (MBE). In this paper an overview is given of the results and conclusions of recent material research on the MBE growth, characterization and properties of SiC heteropolytypic structures and related materials.