Author/Authors :
Kobayashi، نويسنده , , M. and Usuki، نويسنده , , Y. and Ishii، نويسنده , , M. and Yazawa، نويسنده , , T. and Hara، نويسنده , , K. and Tanaka، نويسنده , , M. and Nikl، نويسنده , , M. and Baccaro، نويسنده , , S. and Cecilia، نويسنده , , A. and Diemoz، نويسنده , , M. and Dafinei، نويسنده , , I.، نويسنده ,
Abstract :
La-doping significantly improves the radiation hardness of PbWO4 against γ-ray irradiation. The induced absorption coefficient of La-doped samples is as small as 2 m−1 at 420 nm even at 108 rad (106 Gy). The radiation-induced phosphorescence is more than three orders of magnitude less in La-doped PbWO4 crystals than in undoped ones.
